Boron Induced Changes in the Structural Properties of Amorphous Silicon Boron Alloys

Abstract

AbstractThin films of an amorphous Si-B alloy with B contents 1–50% were deposited by low pressure chemical vapor deposition (LPCVD) from diborane (B2H6) and silane (SilH4) gases. XRD patterns of the as deposited films showed them to be completely amorphous. The films were annealed in N2 at 600–800°C for 30 minutes and characterized by Raman spectroscopy. Wet oxidation of the film was carried out 700°C for 30 minutes, and the films examined by XRD. The structural changes induced by B in the a-Si network discussed in the conceptual framework of the continuous random network (CRN) model. We conclude that the boron incorporation enhances the structural disorder and induces topological changes in the amorphous network.