Author:
Srujana A.,Wadhawan A.,Srikala K.,Gorman B.P.,Cottier R.J.,Zhao Wei,Littler C.L.,Perez J.M.,Golding T.D.,Birdwell A.G.,Henrion W.,Rebien M.,Stauss P.,Glosser R.
Abstract
ABSTRACTIron disilicide shows great promise as a silicon based light emitter operating in the 1.3 to 1.5 μm wavelength range. However, there exists a number of questions related to the band structure and the ability to alloy and controllably dope the material both n and p type. In this paper we present Raman and magneto transport studies on β-FeSi2, β-(Fe1-xCrx)Si2, and β-(Fe1-xCox)Si2 grown by MBE. By comparing the spectra obtained for undoped and doped samples we provide a general overview of the effects of doping on the crystallinity of the material. The temperature dependent (4K<T<300K) magneto transport illustrates that Cr is a p-type dopant and Co is an n-type dopant in β-FeSi2.The temperature dependence of the resistivity indicates that the transport properties at higher temperatures are determined by free carriers whereas at lower temperatures impurity band conduction prevails.
Publisher
Springer Science and Business Media LLC