Single Electron Memory Effect Using Random Telegraph Signals at Room Temperature-Reference-Cited by-同舟云学术

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Single Electron Memory Effect Using Random Telegraph Signals at Room Temperature

Published:2019-10-09 Issue: Volume:7 Page:
ISSN:2296-424X
Container-title:Frontiers in Physics
language:
Short-container-title:Front. Phys.

Author:

Ibukuro Kouta,Husain Muhammad Khaled,Li Zuo,Hillier Joseph,Liu Fayong,Tomita Isao,Tsuchiya Yoshishige,Rutt Harvey,Saito Shinichi

Funder

Lloyd's Register Foundation

Engineering and Physical Sciences Research Council

Publisher

Frontiers Media SA

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy,Mathematical Physics,Materials Science (miscellaneous),Biophysics

Reference60 articles.

1. There's plenty of room at the bottom [data storage];Feynman;J Microelectromech Syst.,1992

2. Cramming more components onto integrated circuits;Moore;Electronics.,1965

3. Design of ion-implanted MOSFET's with very small physical dimensions;Dennard;IEEE J Solid-State Circuits.,1974

4. Electronic properties of two-dimensional systems;Ando;Rev Mod Phys.,1982

5. Quantitative understanding of inversion-layer capacitance in Si MOSFET's;Takagi;IEEE Trans Elec Dev.,1995

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