Effect of SnS Thin Film on the Performance of Porous Silicon Photodiode-Reference-Cited by-同舟云学术

Effect of SnS Thin Film on the Performance of Porous Silicon Photodiode

Published:2016-01 Issue: Volume:63 Page:67-76
ISSN:2299-3843
Container-title:International Letters of Chemistry, Physics and Astronomy
language:
Short-container-title:ILCPA

Author:

Abd Ahmed N.¹^ORCID,Abdulridha Wasna'a M.²,Dawood Mohammed Odda¹

Affiliation:

1. Al-Mustansiriyah University

2. University of Al-Kufa

Abstract

In this study, Al/SnS/PS/n-Si/Al photodiode was fabricated and investigated. SnS thin film were prepared by thermal evaporation technique on porous silicon layer which prepared by anodization technique at 32mA/cm2 etching current density and etching time 15min.The characteristics of porous silicon and SnS were investigated by using x-ray diffraction XRD, atomic force microscopy AFM, Fourier transformation infrared spectroscopy FT-IR.Dark and illuminated current-voltage I-V characteristics, spectral responsivity, specific detectivity of photodiode were investigated after depositing. Significant improvement in photosensitivity and detectivity of porous silicon photodiode after SnS deposition on porous silicon was noticed.

Publisher

SciPress Ltd

Subject

Psychiatry and Mental health,Neuropsychology and Physiological Psychology

Link

https://www.scipress.com/ILCPA.63.67.pdf

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