Abstract
Type II vertical heterojunction is a good solution for long-wavelength light detection. Here, we report a rhenium selenide/molybdenum telluride (n-ReSe2/p-MoTe2) photodetector for high-performance photodetection in the broadband spectral range of 405–2000 nm. Due to the low Schottky barrier contact of the ReSe2/MoTe2 heterojunction, the rectification ratio (RR) of ~102 at ±5 V is realized. Besides, the photodetector can obtain maximum responsivity (R = 1.05 A/W) and specific detectivity (D* = 6.66 × 1011 Jones) under the illumination of 655 nm incident light. When the incident wavelength is 1550–2000 nm, a photocurrent is generated due to the interlayer transition of carriers. This compact system can provide an opportunity to realize broadband infrared photodetection.
Funder
the National Natural Science Foundation of China
Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology
Subject
General Materials Science,General Chemical Engineering
Cited by
8 articles.
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