Advances on Sb2Se3 Solar Cells Fabricated by Physical Vapor Deposition Techniques

Author:

Jakomin Roberto1,Rampino Stefano2ORCID,Spaggiari Giulia23ORCID,Pattini Francesco2

Affiliation:

1. Campus Duque de Caxias, Universidade Federal do Rio de Janeiro, Rio de Janeiro 25240-005, Brazil

2. Consiglio Nazionale delle Ricerche, IMEM Institute, 43124 Parma, Italy

3. Department of Mathematical, Physical and Computer Sciences, University of Parma, Parco Area delle Scienze 7/a (Campus), 43124 Parma, Italy

Abstract

Sb2Se3, as an earth-abundant and low-toxic material, has emerged as one of the most interesting absorbers for clean renewable power generation technologies. Due to its optical properties, especially bandgap and absorption coefficient, the number of papers on Sb2Se3-based solar cells has been constantly increasing in the last ten years, and its power conversion efficiency has raised from 1% in 2014 to 10.57% in 2022. In this review, different Sb2Se3 solar cells’ fabrication technologies based on physical vapor deposition are described and correlated to the texture coefficient (ribbon orientation). Moreover, recent research works of the most promising solar cell configurations with different electron-transporting layers and hole-transporting layers are analyzed with a special emphasis on photovoltaic performances. Furthermore, different Sb2Se3 doping techniques are discussed. All these aspects are considered as new strategies to overcome the Sb2Se3 solar cell’s actual limitations.

Funder

Italian Ministry of the Environment and the Energy Security

Italian Ministry of University and Research

Publisher

MDPI AG

Subject

General Medicine

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3