Tellurium Doping Inducing Defect Passivation for Highly Effective Antimony Selenide Thin Film Solar Cell
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Published:2023-03-31
Issue:7
Volume:13
Page:1240
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ISSN:2079-4991
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Container-title:Nanomaterials
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language:en
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Short-container-title:Nanomaterials
Author:
Chen Guojie1, Li Xiangye1, Abbas Muhammad1ORCID, Fu Chen1, Su Zhenghua1, Tang Rong2, Chen Shuo1ORCID, Fan Ping1, Liang Guangxing1ORCID
Affiliation:
1. Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China 2. School of New Energy and Energy Conservation and Environmental Protection Engineering, Foshan Polytechnic, Foshan 528137, China
Abstract
Antimony selenide (Sb2Se3) is emerging as a promising photovoltaic material owing to its excellent photoelectric property. However, the low carrier transport efficiency, and detrimental surface oxidation of the Sb2Se3 thin film greatly influenced the further improvement of the device efficiency. In this study, the introduction of tellurium (Te) can induce the benign growth orientation and the desirable Sb/Se atomic ratio in the Te-Sb2Se3 thin film. Under various characterizations, it found that the Te-doping tended to form Sb2Te3-doped Sb2Se3, instead of alloy-type Sb2(Se,Te)3. After Te doping, the mitigation of surface oxidation has been confirmed by the Raman spectra. High-quality Te-Sb2Se3 thin films with preferred [hk1] orientation, large grain size, and low defect density can be successfully prepared. Consequently, a 7.61% efficiency Sb2Se3 solar cell has been achieved with a VOC of 474 mV, a JSC of 25.88 mA/cm2, and an FF of 64.09%. This work can provide an effective strategy for optimizing the physical properties of the Sb2Se3 absorber, and therefore the further efficiency improvement of the Sb2Se3 solar cells.
Funder
National Natural Science Foundation of China Guangdong Basic and Applied Basic Research Foundation Science and Technology plan project of Shenzhen
Subject
General Materials Science,General Chemical Engineering
Reference35 articles.
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