LWIR Lateral Effect Position Sensitive HgCdTe Photodetector at 205 K

Author:

Pawluczyk Jarosław12ORCID,Żbik Mateusz23,Piotrowski Józef2

Affiliation:

1. Institute of Applied Physics, Military University of Technology, 00-908 Warsaw, Poland

2. VIGO Photonics S.A., 05-850 Ozarow Mazowiecki, Poland

3. Institute of Electronic Systems, Warsaw University of Technology, 00-665 Warsaw, Poland

Abstract

We describe in detail the construction and characterization of a Peltier-cooled long-wavelength infrared (LWIR) position-sensitive detector (PSD) based on the lateral effect. The device was recently reported for the first time to the authors’ knowledge. It is a modified PIN HgCdTe photodiode, forming the tetra-lateral PSD, with a photosensitive area of 1 × 1 mm2, operating at 205 K in the 3–11 µm spectral range, capable of achieving a position resolution of 0.3–0.6 µm using 10.5 µm 2.6 mW radiation focused on a spot of the 1/e2 diameter 240 µm, with a box-car integration time of 1 µs and correlated double sampling.

Funder

VIGO Photonics S.A. in Poland and ASML Netherlands B.V.

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Biochemistry,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry

Reference66 articles.

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2. Infrared Devices and Techniques (Revision);Chrzanowski;Metrol. Meas. Syst.,2014

3. (2023, March 17). Applications. Available online: https://vigophotonics.com/knowledge-base/applications/.

4. Rogalski, A. (2019). Infrared and Terahertz Detectors, Taylor & Francis Group. [3rd ed.].

5. (2023, March 27). Calibrated Thermal Position & Power Sensors. Available online: https://www.thorlabs.com/newgrouppage9.cfm?objectgroup_id=13545.

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