Material Removal Capability and Profile Quality Assessment on Silicon Carbide Micropillar Fabrication with a Femtosecond Laser

Abstract

Silicon carbide (SiC) has a variety of applications because of its favorable chemical stability and outstanding physical characteristics, such as high hardness and high rigidity. In this study, a femtosecond laser with a spiral scanning radial offset of 5 μm and a spot radius of 6 μm is utilized to process micropillars on a SiC plate. The influence of pulsed laser beam energies and laser translation velocities on the micropillar profiles, dimensions, surface roughness Ra, and material removal capability (MRC) of micropillars was investigated. The processing results indicate that the micropillar has the best perpendicularity, with a micropillar bottom angle of 75.59° under a pulsed beam energy of 50 μJ in the range of 10–70 μJ, with a pulsed repetition rate of 600 kHz and a translation velocity of 0.1 m/s. As the laser translation velocity increases between 0.2 m/s and 1.0 m/s under a fixed pulsed beam energy of 50 μJ and a constant pulsed repetition rate of 600 kHz, the micropillar height decreases from 119.88 μm to 81.79 μm, with the MRC value increasing from 1.998 μm3/μJ to 6.816 μm3/μJ, while the micropillar bottom angle increases from 68.87° to 75.59°, and the Ra value diminishes from 0.836 μm to 0.341 μm. It is suggested that a combination of a higher pulsed laser beam energy with a faster laser translation speed is recommended to achieve micropillars with the same height, as well as an improved processing efficiency and surface finish.