High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors-Reference-Cited by-同舟云学术

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High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors

Published:2017-03-21 Issue:3 Volume:10 Page:319
ISSN:1996-1944
Container-title:Materials
language:en
Short-container-title:Materials

Author:

Zhang Jiawei,Yang Jia,Li Yunpeng,Wilson Joshua,Ma Xiaochen,Xin Qian,Song Aimin

Funder

Engineering and Physical Sciences Research Council

National Natural Science Foundation of China

Natural Science Foundation of Shandong Province

Shandong University

Publisher

MDPI AG

Subject

General Materials Science

Link

http://www.mdpi.com/1996-1944/10/3/319/pdf

Reference31 articles.

1. Present status of amorphous In–Ga–Zn–O thin-film transistors;Toshio;Sci. Technol. Adv. Mater.,2010

2. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

3. Overview of electroceramic materials for oxide semiconductor thin film transistors

4. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

5. Flexible indium–gallium–zinc–oxide Schottky diode operating beyond 2.45 GHz

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5. High Field-Effect Mobility and On/Off Current Ratio of p-Type ALD SnO Thin-Film Transistor;ACS Applied Electronic Materials;2023-02-03

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