Research on the Preparation and Application of Fixed-Abrasive Tools Based on Solid-Phase Reactions for Sapphire Wafer Lapping and Polishing

Abstract

Single-crystal sapphire specimen (α-Al2O3) have been widely applied in the semiconductor industry, microelectronics, and so on. In order to shorten the production time and improve the processing efficiency of sapphire processing, an integrated fixed-abrasive tool (FAT) based on solid-phase reactions is proposed in this article. The optimal FAT composition is determined using a preliminary experiment and orthogonal experiments. The mass fraction of the abrasives is chosen as 55 wt%, and the mass ratio of SiO2/Cr2O3 is 2. Surface roughness Ra decreased from 580.4 ± 52.7 nm to 8.1 ± 0.7 nm after 150 min, and the average material removal rate was 14.3 ± 1.2 nm/min using the prepared FAT. Furthermore, FAT processing combined with chemical mechanical polishing (CMP) was shortened by 1.5 h compared to the traditional sapphire production process in obtaining undamaged sapphire surfaces with a roughness of Ra < 0.4 nm, which may have the potential to take the place of the fine lapping and rough polishing process.