Detecting and Measuring Defects in Wafer Die Using GAN and YOLOv3

Abstract

This research used deep learning methods to develop a set of algorithms to detect die particle defects. Generative adversarial network (GAN) generated natural and realistic images, which improved the ability of you only look once version 3 (YOLOv3) to detect die defects. Then defects were measured based on the bounding boxes predicted by YOLOv3, which potentially provided the criteria for die quality sorting. The pseudo defective images generated by GAN from the real defective images were used as the training image set. The results obtained after training with the combination of the real and pseudo defective images were 7.33% higher in testing average precision (AP) and more accurate by one decimal place in testing coordinate error than after training with the real images alone. The GAN can enhance the diversity of defects, which improves the versatility of YOLOv3 somewhat. In summary, the method of combining GAN and YOLOv3 employed in this study creates a feature-free algorithm that does not require a massive collection of defective samples and does not require additional annotation of pseudo defects. The proposed method is feasible and advantageous for cases that deal with various kinds of die patterns.