Affiliation:
1. School of Mechanical Engineering and Automation, Harbin Institute of Technology (Shenzhen), Shenzhen 518071, China
2. School of Aeronautics and Astronautics, University of Electronic Science and Technology of China, Chengdu 611731, China
Abstract
One of the main factors that limit the lifetime of the Hall effect Thrusters (HETs) is the erosion of the acceleration channel caused by the flux of energetic ions. The magnetic field that is curved and convex towards the anode has been widely used in HETs because of its role in reducing the divergence angle of the ion beam and the channel wall erosion. However, the mechanism of the influence of the magnetic field line curvature on the wall erosion is not clear. Therefore, in this paper, a 2D3V numerical model based on the immersed-finite-element and particle-in-cell (IFE-PIC) method is established to simulate the radial-azimuthal plane near the exit of the Hall thruster. The effect of the tilt angle of the magnetic field line on the wall sputtering erosion rate is analyzed. The results show that compared to the case with the electric field E perpendicular to the magnetic field B, the energy of the ions hitting the channel wall is smaller and the wall erosion is weaker when the magnetic field lines are convex to the anode. As the tilt angle of the magnetic field lines increases from 0° to 60°, the erosion rate is reduced by 90%. Conversely, when the magnetic field lines are convex to the exit plane of the channel, the wall erosion is much more serious compared to the case with the orthogonal electric field E and the magnetic field B. As the tilt angle of the magnetic field line changes from 0° to 60°, the erosion rate is enhanced by 171%. The results in this paper are instructive for the design and optimization of the magnetic field of the HETs.
Funder
National Natural Science Foundation of China
China Postdoctoral Science Foundation
Guangdong Basic and Applied Basic Research Foundation
Shenzhen Technology Project
Subject
Fluid Flow and Transfer Processes,Computer Science Applications,Process Chemistry and Technology,General Engineering,Instrumentation,General Materials Science
Cited by
2 articles.
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