High-Performance Low-Voltage Transparent Metal-Semiconductor-Metal Ultraviolet Photodetectors Based on Ultrathin Gold Asymmetric Interdigitated Electrodes

Abstract

A high-performance, low-voltage, transparent, metal-semiconductor-metal ultraviolet (UV) photodetector (PD) is proposed and experimentally demonstrated, based on gold (Au) asymmetric interdigitated (aIDT) electrodes with thicknesses well below 10 nm. A 7-nm-thick Au film, with a visible transmittance of 80.4% and a sheet resistance of 11.55 Ω/sq, is patterned into aIDT electrodes on a ZnO active layer, whose average visible transmittance is up to 74.3%. Meshing the pads further improves the overall transmittance of the device. Among all fabricated devices, the PD with the aIDT finger width ratio of 1:4 performs the best. Very low dark currents are achieved at 0, 0.5 and 1 V, allowing for high responsivities and specific detectivities to the UV light. It is also a fast device, especially under the biases of 0.5 and 1 V. The comprehensive performances are comparable and even superior to those of the reported devices. The asymmetric Schottky junctions induced by the aIDT electrodes under UV illumination are the main mechanism for the low-voltage operation of our transparent PD, which is promising to be applied widely.