Analysis of Circuit Simulation Considering Total Ionizing Dose Effects on FinFET and Nanowire FET-Reference-Cited by-同舟云学术

Analysis of Circuit Simulation Considering Total Ionizing Dose Effects on FinFET and Nanowire FET

Published:2021-01-20 Issue:3 Volume:11 Page:894
ISSN:2076-3417
Container-title:Applied Sciences
language:en
Short-container-title:Applied Sciences

Author:

Won Hyeonjae,Kang Myounggon^ORCID

Abstract

In this study, we analyzed the total ionizing dose (TID) effect characteristics of p-type FinFET and Nanowire FET (NW-FET) according to the structural aspect through comparison of the two devices. Similar to n-type devices, p-type NW-FETs are less affected than FinFETs by the TID effect. For the inverter TID circuit simulation, both n- and p-types of FinFET and NW-FET were analyzed regarding the TID effect. The inverter operation considering the TID effect was verified using the Berkeley short-channel insulated-gate FET model (BSIM) common multi-gate (CMG) parameters. In addition, an inverter circuit composed of the NW-FET exhibited a smaller change by the TID than that of an inverter circuit composed of the FinFET. Therefore, the gate controllability of the gate-all-around (GAA) device had an excellent tolerance to not only short-channel effects (SCE) but also TID effects.

Publisher

MDPI AG

Subject

Fluid Flow and Transfer Processes,Computer Science Applications,Process Chemistry and Technology,General Engineering,Instrumentation,General Materials Science

Link

https://www.mdpi.com/2076-3417/11/3/894/pdf

Reference34 articles.

1. Design of a MGy radiation tolerant resolver-to-digital convertor IC for remotely operated maintenance in harsh environments

2. Incremental Enhancement of SEU Hardened 90 nm CMOS Memory Cell

3. Optimizing Radiation Hard by Design SRAM Cells

4. 17 bit 4.35mW 1kHz Delta Sigma ADC and 256-to-1 multiplexer for remote handling instrumentation equipment

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of DMGC CGAA FET Under Heavy Ion Irradiation Environment: A Reliability Analysis;2023 IEEE 20th India Council International Conference (INDICON);2023-12-14

2. Simulation of Total Ionizing Dose Effects Technique for CMOS Inverter Circuit;Micromachines;2023-07-18

3. Designing and Reliability Analysis of Radiation Hardened Stacked Gate Junctionless FinFET and CMOS Inverter;IEEE Transactions on Device and Materials Reliability;2023-06

4. Temperature Dependent Linearity/Harmonic Analysis for FinFET and Gate All Around (GAA) Nanowire FET;2021 IEEE 2nd International Conference on Applied Electromagnetics, Signal Processing, & Communication (AESPC);2021-11-26

5. TID Circuit Simulation in Nanowire FETs and Nanosheet FETs;Electronics;2021-04-16