High-Bonding-Strength Polyimide Films Achieved via Thermal Management and Surface Activation
-
Published:2023-05-08
Issue:9
Volume:13
Page:1575
-
ISSN:2079-4991
-
Container-title:Nanomaterials
-
language:en
-
Short-container-title:Nanomaterials
Author:
He Pin-Syuan12, Tran Dinh-Phuc12, Kuo Ting-Yu12, Hsu Wei-You12, Lin Huai-En12, Shie Kai-Cheng12, Chen Chih12ORCID
Affiliation:
1. Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan 2. Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
Abstract
In this study, thermal and argon (Ar) plasma/wetting treatments were combined to enhance the bonding strength of polyimide (PI) films. Attenuated total reflectance-Fourier transform infrared spectroscopy (ATR-FTIR) was used to analyze the changes in the PI imidization degrees. The contact angles of the PI films were also measured. The results show that the contact angles of the fully cured PI films markedly decreased from 78.54° to 26.05° after the Ar plasma treatments. X-ray photoelectron spectroscopy (XPS) analysis was also conducted on the PI surfaces. We found that the intensities of the C-OH and C-N-H bonds increased from 0% to 13% and 29% to 57%, respectively, after Ar plasma activation. Such increases in the C-OH and C-N-H intensities could be attributed to the generation of dangling bonds and the breakage of the imide ring or polymer long chains. Shear tests were also conducted to characterize the bonding strength of the PI films, which, after being treated with the appropriate parameters of temperature, plasma power, and wetting droplets, was found to be excellent at greater than 35.3 MPa.
Subject
General Materials Science,General Chemical Engineering
Reference33 articles.
1. Enquist, P., Fountain, G., Petteway, C., Hollingsworth, A., and Grady, H. (2009, January 28–30). Low Cost of Ownership scalable copper Direct Bond Interconnect 3D IC technology for three dimensional integrated circuit applications. Proceedings of the IEEE International Conference on 3D System Integration, San Francisco, CA, USA. 2. Gambino, J., Winzenread, R., Thomas, K., Muller, R., Truong, H., Defibaugh, D., Price, D., Goshima, K., Hirano, T., and Watanabe, Y. (2017, January 16–18). Reliability of hybrid bond interconnects. Proceedings of the IEEE International Interconnect Technology Conference (IITC), Hsinchu, Taiwan. 3. Beyne, E., Kim, S.-W., Peng, L., Heylen, N., De Messemaeker, J., Okudur, O.O., Phommahaxay, A., Kim, T.-G., Stucchi, M., and Velenis, D. (2017, January 2–6). Scalable, sub 2 μm pitch, Cu/SiCN to Cu/SiCN hybrid wafer-to-wafer bonding technology. Proceedings of the IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. 4. Sukegawa, S., Umebayashi, T., Nakajima, T., Kawanobe, H., Koseki, K., Hirota, I., Haruta, T., Kasai, M., Fukumoto, K., and Wakano, T. (2013, January 17–21). A 1/4-inch 8Mpixel back-illuminated stacked CMOS image sensor. Proceedings of the IEEE International Solid-State Circuits Conference Digest of Technical Papers, San Francisco, CA, USA. 5. Yoneda, S., Adachi, K., Kobayashi, K., Matsukawa, D., Sasaki, M., Itabashi, T., Shirasaka, T., and Shibata, T. (July, January 1). A Novel Photosensitive Polyimide Adhesive Material for Hybrid Bonding Processing. Proceedings of the IEEE 71st Electronic Components and Technology Conference (ECTC), San Diego, CA, USA.
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Low Contact Resistance and Low Temperature Hybrid Bonding with Polyimide and Highly <111>-oriented Nanotwinned Cu;2023 18th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT);2023-10-25
|
|