Efficient 3D-TLM Modeling and Simulation for the Thermal Management of Microwave AlGaN/GaN HEMT Used in High Power Amplifiers SSPA
Author:
Publisher
MDPI AG
Subject
Electrical and Electronic Engineering
Link
http://www.mdpi.com/2079-9268/8/3/23/pdf
Reference46 articles.
1. Wideband 400 W pulsed power GaN HEMT amplifiers
2. Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives
3. AlGaN/GaN HEMTs-an overview of device operation and applications
4. Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization
5. High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
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2. Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study;Micromachines;2023-12-27
3. Enhanced Operational Characteristics Attained by Applying HfO2 as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Study;Micromachines;2023-05-23
4. Thermal Analysis of Micro-Heaters using the 3D-TLM method and COMSOL Multiphysics software for MEMS based Gas Sensor;PRZEGLĄD ELEKTROTECHNICZNY;2023-03-10
5. Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review;Micromachines;2022-12-01
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