Assessing Effects of van der Waals Corrections on Elasticity of Mg3Bi2−xSbx in DFT Calculations

Author:

Peng Qing123ORCID,Ma Xinjie24,Yang Xiaoyu25,Zhao Shuai26,Yuan Xiaoze2,Chen Xiaojia1

Affiliation:

1. School of Science, Harbin Institute of Technology, Shenzhen 518055, China

2. The State Key Laboratory of Nonlinear Mechanics, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190, China

3. Guangdong Aerospace Research Academy, Guangzhou 511458, China

4. Beijing MaiGao MatCloud Technology Co., Ltd., Beijing 100190, China

5. Computer Network Information Center, Chinese Academy of Sciences, Beijing 100190, China

6. Department of Modern Mechanics, University of Science and Technology of China, Hefei 230026, China

Abstract

As a promising room-temperature thermoelectric material, the elastic properties of Mg3Bi2−xSbx (0 ≤ x ≤ 2), in which the role of van der Waals interactions is still elusive, were herein investigated. We assessed the effects of two typical van der Waals corrections on the elasticity of Mg3Bi2−xSbx nanocomposites using first-principles calculations within the frame of density functional theory. The two van der Waals correction methods, PBE-D3 and vdW-DFq, were examined and compared to PBE functionals without van der Waals correction. Interestingly, our findings reveal that the lattice constant of the system shrinks by approximately 1% when the PBE-D3 interaction is included. This leads to significant changes in certain mechanical properties. We conducted a comprehensive assessment of the elastic performance of Mg3Bi2−xSbx, including Young’s modulus, Poisson’s ratio, bulk modulus, etc., for different concentration of Sb in a 40-atom simulation box. The presence or absence of van der Waals corrections does not change the trend of elasticity with respect to the concentration of Sb; instead, it affects the absolute values. Our investigation not only clarifies the influence of van der Waals correction methods on the elasticity of Mg3Bi2−xSbx, but could also help inform the material design of room-temperature thermoelectric devices, as well as the development of vdW corrections in DFT calculations.

Funder

Shenzhen Science and Technology Program

High-level Innovation Research Institute Program of Guangdong Province

Institute of Mechanics

Publisher

MDPI AG

Subject

General Materials Science

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