Protection of Cu from Oxidation by Ta Capping Layer

Author:

Zhidkov Ivan S.12ORCID,Kukharenko Andrey I.12,Milyaev Mikhail A.2,Kravtsov Evgeniy A.23,Makarova Marina V.23,Gapontsev Vladimir V.12,Streltsov Sergey V.12,Cholakh Seif O.1,Kurmaev Ernst Z.12ORCID

Affiliation:

1. Institute of Physics and Technology, Ural Federal University, Mira 21 Street, Yekaterinburg 620002, Russia

2. M. N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, S. Kovalevskoi 18 Street, Yekaterinburg 620108, Russia

3. Institute of Fundamental Education, Ural Federal University, Mira 19 Street, Yekaterinburg 620002, Russia

Abstract

X-ray reflectometry (XRR) and X-ray photoelectron spectroscopy (XPS) measurements (core levels and valence bands) were made of Cu thin films that were prepared and coated by capping Ta layers with different thicknesses (5, 10, 15, 20, and 30 Å), and are presented. The XRR and XPS Ta 4f-spectra revealed a complete oxidation of the protective layer up to a thickness of 10 Å. From the thickness of the capping layer of 15 Å, a pure Ta-metal line appeared in the XPS Ta 4f-spectrum, the contribution of which increased up to 30 Å. The XPS Cu 2p-spectra of the underlying copper layer revealed the oxidation with the formation of CuO up to a thickness of the Ta-layer of 10 Å. Starting from a thickness of 15 Å, the complete protection of the Cu layer against oxidation was ensured during exposure to the ambient atmosphere.

Funder

Ministry of Science and Higher Education of Russia

Publisher

MDPI AG

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces

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