Growth and Optical Properties of Ga2O3 Layers of Different Crystalline Modifications

Abstract

In the present work, a new method of growing layers of three main crystal modifications of Ga2O3, namely α-phase, ε-phase, and β-phase, with thickness of 1 µm or more was developed. The method is based on the use of two approaches, namely a combination of Ga2O3 growth using the hydride vapor-phase epitaxy (HVPE) method and the use of a silicon crystal with a buffer layer of dislocation-free silicon carbide as a substrate. As a result, Ga2O3 gallium oxide layers of three major Ga2O3 crystal modifications were grown, namely, α-phase, ε-phase, and β-phase. The substrate temperatures and precursor flux values at which it is possible to grow only α-phase, only ε-phase, or only β-phase without a mixture of these phases were established. It was found that the metastable α- and ε-phases change into the stable β-phase when heated above 900 °C. Experimentally obtained Raman and ellipsometric spectra of α-phase, ε-phase, and β-phase of Ga2O3 are presented. The theoretical study of the Raman spectra and the dependences of dielectric function on photon energy for all three phases was carried out. The vibrations of Ga2O3 atoms corresponding to the main lines of the Raman spectrum of the α-phase, ε-phase, and β-phase were simulated by density functional methods.