Comparison of RF and High Impulse Magnetron Sputtered Gallium-Doped Zinc Oxide Thin Films

Abstract

For the first time in the literature, the material properties of gallium-doped zinc oxide, grown from a high impulse magnetron sputtering system (HiPIMS), are reported. These material properties are compared to those of a typical radio frequency (RF) sputtering deposition. The films were grown without thermal assistance and were compared across multiple average deposition powers. The films’ resistivity, crystallinity, absorption coefficient, band gap, and refractive index were measured for each of the samples. It was observed that very similar results could be obtained between the HiPIMS and RF sputtering processes under the same average power conditions. It was found that the RF depositions demonstrated a slightly higher band gap and deposition rate as well as lower resistivity and optical absorption coefficient. Band gaps and grain size were found to increase with the power of the deposition for both HiPIMS and RF. These values ranged between 3.45 eV and 3.79 eV and 9 nm and 23 nm in this study, respectively. The absorption coefficient and resistivity were both found to decline with increasing power in both methods but reached minimums of 2800 cm−1 and 0.94 mOhm-cm, respectively, when sputtered using an RF power supply.