RHEED Study of the Epitaxial Growth of Silicon and Germanium on Highly Oriented Pyrolytic Graphite

Author:

Lozovoy Kirill A.1ORCID,Dirko Vladimir V.1,Kukenov Olzhas I.1ORCID,Sokolov Arseniy S.1,Krukovskii Konstantin V.2,Snegerev Mikhail S.3,Borisov Alexey V.3,Kistenev Yury V.34ORCID,Kokhanenko Andrey P.1

Affiliation:

1. Department of Quantum Electronics and Photonics, Faculty of Radiophysics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, Russia

2. Institute of Strength Physics and Materials Science of Siberian Branch of Russian Academy of Sciences, Akademicheskii Av. 2/4, 634055 Tomsk, Russia

3. Laboratory of Biophotonics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, Russia

4. Institute of Atmospheric Optics of Siberian Branch of Russian Academy of Sciences, Academician Zuev Sq. 1, 634055 Tomsk, Russia

Abstract

Two-dimensional silicon (silicene) and germanium (germanene) have attracted special attention from researchers in recent years. At the same time, highly oriented pyrolytic graphite (HOPG) and graphene are some of the promising substrates for growing silicene and germanene. However, to date, the processes occurring during the epitaxial growth of silicon and germanium on the surface of such substrates have been poorly studied. In this work, the epitaxial growth of silicon and germanium is studied directly during the process of the molecular beam epitaxy deposition of material onto the HOPG surface by reflection high-energy electron diffraction (RHEED). In addition, the obtained samples are studied by Raman spectroscopy and scanning electron microscopy. A wide range of deposition temperatures from 100 to 800 °C is considered and temperature intervals are determined for various growth modes of silicon and germanium on HOPG. Conditions for amorphous and polycrystalline growth are distinguished. Diffraction spots corresponding to the lattice constants of silicene and germanene are identified that may indicate the presence of areas of graphene-like 2D phases during epitaxial deposition of silicon and germanium onto the surface of highly oriented pyrolytic graphite.

Funder

Russian Science Foundation

Publisher

MDPI AG

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