Abstract
This paper presents theoretical studies of Fano resonance based electric-field (E-field) sensors. E-field sensor based on two electro-optical (EO) materials i.e., barium titanate (BaTiO3, BTO) nanoparticles and relaxor ferroelectric material Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) combined with nanostructure are studied. As for the BTO based E-field sensor, a configuration of filling the BTO nanoparticles into a nano-patterned thin film silicon is proposed. The achieved resonance quality factor (Q) is 11,855 and a resonance induced electric field enhancement factor is of around 105. As for the design of PMN-PT based E-field sensor, a configuration by combining two square lattice air holes in PMN-PT thin film but with one offsetting hole left is chosen. The achieved resonance Q is of 9,273 and an electric field enhancement factor is of around 96. The resonance wavelength shift sensitivity of PMN-PT nanostructured can reach up to 4.768 pm/(V/m), while the BTO based nanostructure has a sensitivity of 0.1213 pm/(V/m). If a spectrum analyzer with 0.1 pm resolution is considered, then the minimum detection of the electric field Emin is 20 mV/m and 0.82 V/m for PMN-PT and BTO based nanostructures, respectively. The nano-patterned E-field sensor studied here are all dielectric, it has therefore the advantage of large measurement bandwidth, high measurement fidelity, high spatial resolution and high sensitivity.
Funder
National Natural Science Foundation of China
NSAF
Natural Science Foundation of Guangdong Province
Open Fund of Guangdong Provincial Key Laboratory of Information Photonics Technology of Guangdong University of Technology
Fundamental Research Funds for the Central Universities
Subject
Radiology, Nuclear Medicine and imaging,Instrumentation,Atomic and Molecular Physics, and Optics
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