Long-Cavity M-Plane GaN-Based Vertical-Cavity Surface-Emitting Lasers with a Topside Monolithic Curved Mirror-Reference-Cited by-同舟云学术

Long-Cavity M-Plane GaN-Based Vertical-Cavity Surface-Emitting Lasers with a Topside Monolithic Curved Mirror

Published:2023-06-03 Issue:6 Volume:10 Page:646
ISSN:2304-6732
Container-title:Photonics
language:en
Short-container-title:Photonics

Author:

Palmquist Nathan C.¹^ORCID,Anderson Ryan¹,Kearns Jared A.¹,Back Joonho²^ORCID,Trageser Emily¹,Gee Stephen¹,Denbaars Steven P.¹²^ORCID,Nakamura Shuji¹²^ORCID

Affiliation:

1. Materials Department, University of California, Santa Barbara, CA 93106, USA

2. Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, USA

Abstract

We report long-cavity (60.5 λ) GaN-based vertical-cavity surface-emitting lasers with a topside monolithic GaN concave mirror, a buried tunnel junction current aperture, and a bottomside nanoporous GaN distributed Bragg reflector. Under pulsed operation, a VCSEL with a 9 µm aperture had a threshold current density of 6.6 kA/cm2, a differential efficiency of 0.7%, and a maximum output power of 290 µW for a lasing mode at 411 nm and a divergence angle of 8.4°. Under CW operation, the threshold current density increased to 7.3 kA/cm2, the differential efficiency decreased to 0.4%, and a peak output power of 130 µW was reached at a current density of 23 kA/cm2.

Funder

Solid-State Lighting and Energy Electronics Center (SSLEEC) at UCSB

Publisher

MDPI AG

Subject

Radiology, Nuclear Medicine and imaging,Instrumentation,Atomic and Molecular Physics, and Optics

Link

https://www.mdpi.com/2304-6732/10/6/646/pdf

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