Effect of Ge Nanocrystals on 1.54 μm Photoluminescence Enhancement in Er2O3:ZnO and Ge Co-Sputtered Films
Author:
Funder
National Natural Science Foundation of China
Publisher
MDPI AG
Subject
General Materials Science,General Chemical Engineering
Link
http://www.mdpi.com/2079-4991/7/10/311/pdf
Reference36 articles.
1. Influence of doping rate in Er^3+:ZnO films on emission characteristics
2. 1.54μm emission mechanism of Er-doped zinc oxide thin films
3. Luminescent spectroscopy and imaging of textured sprayed Er-doped ZnO films in the near ultraviolet and visible regions
4. Er3+/Yb3+-codoped silica–germania sputtered films: structural and spectroscopic characterization
5. Selective formation of an efficient Er‐O luminescence center in GaAs by metalorganic chemical vapor deposition under an atmosphere containing oxygen
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1. Low-temperature growth of narrow optical gap highly conducting nc-Ge thin films with superior crystallinity involving dominant <111> orientation;Solar Energy Materials and Solar Cells;2024-08
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3. Formation of size controlled Ge nanocrystals in Er-doped ZnO matrix and their enhancement effect in 1.54 μm photoluminescence;Applied Surface Science;2018-06
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