Estimation of Temperature-Dependent Band Parameters for Bi-Doped SnSe with High Thermoelectric Performance

Author:

Park Hyunjin1,Kim Sang-il1ORCID,Kim Jeong-Yeon1,Hwang Seong-Mee1,Kim Hyun-Sik1ORCID

Affiliation:

1. Department of Materials Science and Engineering, University of Seoul, 163 Seoulsiripdae-ro, Seoul 02504, Republic of Korea

Abstract

Recent studies have revealed the outstanding thermoelectric performance of Bi-doped n-type SnSe. In this regard, we analyzed the band parameters for Sn1−xBixSe (x = 0.00, 0.02, 0.04, and 0.06) using simple equations and the Single Parabolic Band model. Bi doping suppresses the carrier-phonon coupling while increasing the density-of-states effective mass. The n-type SnSe is known to have two conduction bands converge near 600 K. Bi doping changes the temperature at which the band convergence occurs. When x = 0.04, its weighted mobility maximized near 500 K, which indicated the possible band convergence. The highest zT of the x = 0.04 sample at mid-temperatures (473–573 K) can be attributed to the engineered band convergence via Bi doping.

Funder

National Research Foundation of Korea (NRF), funded by the Ministry of Education

Publisher

MDPI AG

Subject

Materials Science (miscellaneous),Ceramics and Composites

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