Optimizing the Band Alignment of the MZO/CdSeTe/CdTe Solar Cell by Varying the Substrate Temperature of MZO Film-Reference-Cited by-同舟云学术

Optimizing the Band Alignment of the MZO/CdSeTe/CdTe Solar Cell by Varying the Substrate Temperature of MZO Film

Published:2024-01-26 Issue:3 Volume:17 Page:592
ISSN:1996-1073
Container-title:Energies
language:en
Short-container-title:Energies

Author:

Wu Qiuchen¹²^ORCID,Li Ruchun¹²,Zhang Yufeng¹²³,Huang Kai¹²³,Li Heran¹²,Liu Xiangxin¹²³

Affiliation:

1. Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China

2. University of Chinese Academy of Sciences, Beijing 100049, China

3. Institute of Electrical Engineering and Advanced Electromagnetic Drive Technology, Qilu Zhongke, Jinan 250102, China

Abstract

Cadmium telluride (CdTe) photovoltaics is a promising and scalable technology, commanding over 90% of the thin film photovoltaics market. An appropriate window layer is crucial for high-efficiency CdTe solar cells. This study aimed to investigate a representative MgZnO (MZO) window layer and enhance device performance. We studied the properties of MZO films with different substrate temperatures and their application in CdSeTe/CdTe solar cells. Despite the high transmittance and wide band gap of MZO film, the device performance of MZO sputtered at room temperature is limited by excessive conduction band offset. Tailoring the substrate temperature for MZO sputtering helps optimize the band alignment of the MZO/CdSeTe interface, contributing to an improvement in the efficiency of CdTe solar cells.

Funder

Lujiaxi International Team Project of CAS

National Natural Science Foundation of China

Research Program of Institute of Electrical Engineering, CAS

Publisher

MDPI AG

Link

https://www.mdpi.com/1996-1073/17/3/592/pdf

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