Author:
Zhu Guangqian,Fu Zhaoshu,Liu Tingting,Zhang Qidong,Yang Yintang
Abstract
This work presents a high-precision high-order curvature-compensated bandgap voltage reference (BGR) for battery monitoring applications. The collector currents of bipolar junction transistor (BJT) pairs with different ratios and temperature characteristics can cause greater nonlinearities in ΔVEB. The proposed circuit additionally introduces high-order curvature compensation in the generation of ΔVEB, such that it presents high-order temperature effects complementary to VEB. Fabricated using a 0.18 µm BCD process, the proposed BGR generates a 2.5 V reference voltage with a minimum temperature coefficient of 2.65 ppm/°C in the range of −40 to 125 °C. The minimum line sensitivity is 0.023%/V when supply voltage varies from 4.5 to 5.5 V. The BGR circuit area is 382 × 270 μm2, and the BMIC area is 2.8 × 2.8 mm2.
Funder
Industry-University-Academy Cooperation Program of Xidian University-Chongqing IC Innova-tion Research Institute
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering
Cited by
4 articles.
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