A 28 GHz Phased-Array Transceiver for 5G Applications in 22 nm FD-SOI CMOS
Author:
Affiliation:
1. Nordic Semiconductor ASA, Swindon SN5 6NX, UK
2. GlobalFoundries Inc., Austin, TX 78735, USA
3. System on Chip Center, Khalifa University, Abu Dhabi P.O. Box 127788, United Arab Emirates
Abstract
Funder
Global Foundries
Publisher
MDPI AG
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering
Link
https://www.mdpi.com/2072-666X/14/5/1040/pdf
Reference16 articles.
1. A 28-GHz CMOS Phased-Array Transceiver Based on LO Phase-Shifting Architecture with Gain Invariant Phase Tuning for 5G New Radio;Pang;IEEE J. Solid-State Circuits,2019
2. Dunworth, J., Ku, B.-H., Ou, Y.-C., Lu, D., Mouat, P., Homayoun, A., Chakraborty, K., Arnett, A., Liu, G., and Segoria, T. (2018, January 10–15). 28 GHz Phased Array Transceiver in 28 nm Bulk CMOS for 5G Prototype User Equipment and Base Stations. Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium-IMS, Philadelphia, PA, USA.
3. A 28 GHz four-channel phased-array transceiver in 65-nm CMOS technology for 5G applications;Ameen;AEU Int. J. Electron. Commun.,2018
4. Fully Integrated Single-Chip 305–375-GHz Trans-ceiver with On-Chip Antennas in SiGe BiCMOS;Knapp;IEEE Trans. Terahertz Sci. Technol.,2018
5. A High-Power and Scalable 2-D Phased Array for Terahertz CMOS Integrated Systems;Tousi;IEEE J. Solid-State Circuits,2014
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