Extracting and Analyzing the S-Parameters of Vertical Interconnection Structures in 3D Glass Packaging-Reference-Cited by-同舟云学术

Extracting and Analyzing the S-Parameters of Vertical Interconnection Structures in 3D Glass Packaging

Published:2023-03-31 Issue:4 Volume:14 Page:803
ISSN:2072-666X
Container-title:Micromachines
language:en
Short-container-title:Micromachines

Author:

Liu Jinxu¹²,Zhang Jihua¹²³,Gao Libin¹²,Chen Hongwei¹²

Affiliation:

1. School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China

2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

3. Chengdu Micro-Technology Co., Ltd., Chengdu 611731, China

Abstract

In order to effectively employ through-glass vias (TGVs) for high-frequency software package design, it is crucial to accurately characterize the S-parameters of vertical interconnection structures in 3D glass packaging. A methodology is proposed for the extraction of precise S-parameters using the transmission matrix (T-matrix) to analyze and evaluate the insertion loss (IL) and reliability of TGV interconnections. The method presented herein enables the handling of a diverse range of vertical interconnections, encompassing micro-bumps, bond-wires, and a variety of pads. Additionally, a test structure for coplanar waveguide (CPW) TGVs is constructed, accompanied by a comprehensive description of the equations and measurement procedure employed. The outcomes of the investigation demonstrate a favorable concurrence between the simulated and measured results, with analyses and measurements conducted up to 40 GHz.

Funder

Fundamental Research Funds for the Central Universities

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering

Link

https://www.mdpi.com/2072-666X/14/4/803/pdf

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