Author:
Volovlikova Olga,Silakov Gennady,Gavrilov Sergey,Maniecki Tomasz,Dudin Alexander
Abstract
The formation of porous silicon by Pd nanoparticles-assisted chemical etching of single-crystal Si with resistivity ρ = 0.01 Ω·cm at 25 °C, 50 °C and 75 °C in HF/H2O2/H2O solution was studied. Porous layers of silicon were studied by optical and scanning electron microscopy, and gravimetric analysis. It is shown that por-Si, formed by Pd nanoparticles-assisted chemical etching, has the property of ethanol electrooxidation. The chromatographic analysis of ethanol electrooxidation products on por-Si/Pd shows that the main products are CO2, CH4, H2, CO, O2, acetaldehyde (CHO)+, methanol and water vapor. The mass activity of the por-Si/Pd system was investigated by measuring the short-circuit current in ethanol solutions. The influence of the thickness of porous silicon and wafer on the mass activity and the charge measured during ethanol electrooxidation was established. Additionally, the mechanism of charge transport during ethanol electrooxidation was established.
Funder
Russian Science Foundation
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献