Suppression of surface leakage current in InSb photodiode by ZnS passivation-Reference-Cited by-同舟云学术

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Suppression of surface leakage current in InSb photodiode by ZnS passivation

Published:2016 Issue:4/5/6 Volume:13 Page:392
ISSN:1475-7435
Container-title:International Journal of Nanotechnology
language:en
Short-container-title:IJNT

Author:

Park Sehun,Choi Daehan,Park Hwanyeol,Moon Daeyoung,Yoon Euijoon,Park Yongjo,Bae Duk Kyu

Publisher

Inderscience Publishers

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Bioengineering

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface Passivation of IR Photodetectors Based on InSb/In$${}_{\boldsymbol{1-x}}\mathbf{Al}_{\boldsymbol{x}}$$Sb Heterostructures;Optoelectronics, Instrumentation and Data Processing;2024-04

2. Anodic Passivation of InSb(100) by Sodium Sulfide Solution with Additional Sulfidization Pretreatment;Journal of Communications Technology and Electronics;2021-03

3. Properties of Films Based on Nanosize and Submicrometer InSb Particles Passivated with CdS;Technical Physics Letters;2020-10

4. AlInSb/InSb Heterostructures for IR Photodetectors Grown by Molecular-Beam Epitaxy;Technical Physics Letters;2020-02

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