Boosting the Curie temperature in carbon-doped Mn<SUB align="right">5Ge<SUB align="right">3/Ge heterostructures-Reference-Cited by-同舟云学术

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Boosting the Curie temperature in carbon-doped Mn_{5Ge_{3/Ge heterostructures}}

Published:2012 Issue:3/4/5/6/7 Volume:9 Page:428
ISSN:1475-7435
Container-title:International Journal of Nanotechnology
language:en
Short-container-title:IJNT

Author:

Spiesser A.,Dau M T.,Michez L.A.,Petit M.,Coudreau C.,Glachant A.,Thanh V. Le

Publisher

Inderscience Publishers

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Bioengineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mn5Ge3C0.6 /Ge(1 1 1) Schottky contacts tuned by an n-type ultra-shallow doping layer;Journal of Physics D: Applied Physics;2016-08-04

2. Magnetic anisotropy and magnetic domain structure in C-doped Mn5Ge3;Journal of Applied Physics;2015-07-28

3. Mn Diffusion and Reactive Diffusion in Ge: Spintronic Applications;Defect and Diffusion Forum;2015-05

4. Phase formation during Mn thin film reaction with Ge: Self-aligned germanide process for spintronics;Applied Physics Letters;2013-10-21

5. Epitaxial growth and magnetic properties of Mn 5 Ge 3 /Ge and Mn 5 Ge 3 C x /Ge heterostructures for spintronic applications;Advances in Natural Sciences: Nanoscience and Nanotechnology;2013-09-30

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