Silicon Device Structures-Reference-Cited by-同舟云学术

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Silicon Device Structures

Published:2013-02-15 Issue: Volume: Page:
ISSN:
Container-title:Materials Science and Technology
language:
Short-container-title:

Author:

Chang Chun-Yen¹,Sze Simon M.²

Affiliation:

1. National Chiao Tung University; National Nano Device Laboratory; 1001-1 Ta Hsueh Road Hsinchu R.O.C. Taiwan 30050

2. National Chiao Tung University; Microelectronics and Information Systems Research Center; 1001 Ta Hsueh Road Hsinchu R.O.C. Taiwan 30050

Publisher

Wiley-VCH Verlag GmbH & Co. KGaA

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/9783527603978.mst0261/fullpdf

Reference71 articles.

1. New rectifying semiconductor structure by molecular beam epitaxy

2. 0.1 mu m CMOS devices using low-impurity-channel transistors (LICT)

3. Arbitrary doping profiles produced by Sb‐doped Si MBE

4. Induced base transistor fabricated by molecular beam epitaxy

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