Atomic Layer Deposition of Ternary Indium/Tin/Aluminum Oxide Thin Films, Their Characterization and Transistor Performance under Illumination.-Reference-Cited by-同舟云学术

Atomic Layer Deposition of Ternary Indium/Tin/Aluminum Oxide Thin Films, Their Characterization and Transistor Performance under Illumination.

Published:2021-06-04 Issue:38 Volume:27 Page:9791-9800
ISSN:0947-6539
Container-title:Chemistry – A European Journal
language:en
Short-container-title:Chem. Eur. J.

Author:

Büschges M. Isabelle¹,Hoffmann Rudolf C.¹,Regoutz Anna²,Schlueter Christoph³,Schneider Jörg J.¹^ORCID

Affiliation:

1. Fachbereich Chemie Eduard-Zintl-Institut für Anorganische und Physikalische Chemie Technische Universität Darmstadt Alarich-Weiss-Straße 12 64287 Darmstadt Germany

2. Department of Chemistry University College London 20 Gordon Street WC1H 0AJ London UK

3. Deutsches Elektronen-Synchrotron DESY Notkestraße 85 22607 Hamburg Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

Wiley

Subject

General Chemistry,Catalysis,Organic Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/chem.202101126

Reference75 articles.

1. An amorphous oxide semiconductor thin-film transistor route to oxide electronics

2. Aluminum doped zinc oxide films grown by atomic layer deposition for organic photovoltaic devices

3. Charge Transport in Low-Temperature Processed Thin-Film Transistors Based on Indium Oxide/Zinc Oxide Heterostructures

4. Device applications of transparent oxide semiconductors: Excitonic blue LED and transparent flexible TFT

5. Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors

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4. Electronic influence of ultrathin aluminum oxide on the transistor device performance of binary indium/tin oxide films;Journal of Materials Chemistry C;2022