Effect of heat treatment on the 0.93, 1.0, and 1.28 ev luminescence bands in n-GaAs-Reference-Cited by-同舟云学术

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Effect of heat treatment on the 0.93, 1.0, and 1.28 ev luminescence bands in n-GaAs

Published:1973-01-16 Issue:1 Volume:15 Page:287-293
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Vorobkalo F. M.,Glinchuk K. D.,Prokhorovich A. V.,John G.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Effect of heat treatment on the 0.93 eV luminescence band in p-GaAs

2. and , Poluprovodnikovaya tekhnika and microelectronika, Vol. 14, Naukova Dumka, Kiev 1973.

3. The characteristics of the 0.93 to 1.0 ev luminescence bands in GaAs

4. The 0.93 and 1.02 eV luminescence in p-GaAs

5. Recombination and Trapping Processes at Deep Centers in N-Type GaAs

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