The effect of dislocations on the formation of radiation defects in silicon-Reference-Cited by-同舟云学术

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The effect of dislocations on the formation of radiation defects in silicon

Published:1982-05-16 Issue:1 Volume:71 Page:99-108
ISSN:0031-8965
Container-title:physica status solidi (a)
language:de
Short-container-title:phys. stat. sol. (a)

Author:

Kazakevich L. A.,Lugakov P. F.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. , and , Peculiarities of Radiation Damage of Semiconductors by High-Energy Particles, Atomizdat, Moscow 1971 (in Russian).

2. (Ed.), Physical Processes in Irradiated Semiconductors, Nauka, Novosibirsk 1977 (in Russian).

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The effect of irradiation and heat treatment on the dislocation recombination activity in n-type silicon;physica status solidi (a);1990-03-16

2. The role of dislocations during charge-carrier recombination at radiation defects in p-Si;Physica Status Solidi (a);1989-06-16

3. Phosphorus-divacancy complexes in irradiated silicon;Radiation Effects;1988-02

4. Nature and parameters of radiation defects in epitaxial layers of silicon;Radiation Effects;1987-03

5. The Effect of Dislocations on the Activation Energy of Radiation Defect Thermal Ionization;physica status solidi (a);1986-07-16

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