Back surface gettering of Au in GaAs-Reference-Cited by-同舟云学术

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Back surface gettering of Au in GaAs

Published:1979-09-16 Issue:1 Volume:55 Page:161-168
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Magge T. J.,Peng J.,Hong J. D.,Katz W.,Evans C. A.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Lifetime control in silicon through impact sound stressing

2. Poisoning and Gettering Effects in Silicon Junctions

3. and , in: Proc. 3rd Internat. Conf. Ion Implantation in Semiconductors, Ed. Plenum, New York 1973 (p. 305).

4. Ion‐implantation‐damage gettering effect in silicon photodiode array camera target

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dislocations in GaAs Crystals;Defects and Properties of Semiconductors;1987

2. The effects of substrate gettering on GaAs MESFET performance;IEEE Transactions on Electron Devices;1985-12

3. Impurity and Defect Levels (Experimental) in Gallium Arsenide;Advances in Electronics and Electron Physics Volume 61;1983

4. Low‐temperature redistribution and gettering of oxygen in silicon;Journal of Applied Physics;1981-08

5. Ion beam gettering in AIII−BV compounds compared to silicon;Acta Physica Academiae Scientiarum Hungaricae;1981-07

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