The Effects of Neutron Irradiation on the Current Gain of AlGaAs/GaAs Heterojunction Bipolar Transistors
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Heterojunction Bipolar Transistors for Microwave and Millimeter-Wave Integrated Circuits
2. Radiation effects on microelectronics in space
3. Neutron irradiation effects on AlGaAs/GaAs heterojunction bipolar transistors
4. Two-dimensional analysis of the surface recombination effect on current gain for GaAlAs/GaAs HBTs
5. An investigation of the effect of graded layers and tunneling on the performance of AlGaAs/GaAs heterojunction bipolar transistors
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1. Neutron radiation effects on the nonlinear current–voltage characteristics of ilmenite-hematite ceramics;Applied Physics Letters;2003-01-27
2. Proton and Gamma-Ray Irradiation Effects on InGaP/GaAs Heterojunction Bipolar Transistors;Journal of The Electrochemical Society;2002
3. Electrical characterization of neutron irradiation induced defects in undoped epitaxially grownn‐GaAs;Journal of Applied Physics;1993-10
4. Deep Level Transient Spectroscopy Characterization of Electron Irradiation Induced Hole Traps in p-GaAs Grown by Molecular Beam Epitaxy;Japanese Journal of Applied Physics;1993-07-15
5. The effects of ionizing radiation on GaAs/AlGaAs and InGaAs/AlInAs heterojunction bipolar transistors;Materials Science and Engineering: B;1993-07
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