The Effect of the Vacancy Charge State on the Radiation Defect Formation in Silicon-Reference-Cited by-同舟云学术

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The Effect of the Vacancy Charge State on the Radiation Defect Formation in Silicon

Published:1984-10-16 Issue:2 Volume:85 Page:585-590
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Gubskaya V. I.,Kuchinskii P. V.,Lomako V. M.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Defect formation in heavily doped Si upon irradiation

2. and , Radiat. fiz. nemetal, kristal., Naukova Dumka, Kiev 1971 (p. 305).

3. Defect energy levels in boron-doped silicon irradiated with 1-MeV electrons

4. Internal. Conf. Radiat. Eff. in Semicond., Dubrovnik 1976; Ser. No. 31, Bristol/London 1977 (Chap. 2, p. 221).

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1. Charged point defects in semiconductors;Materials Science and Engineering: R: Reports;2006-12

2. Efficiency of formation of radiation defects in silicon upon implantation of silicon and phosphorus ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-10

3. Intrinsic Point Defects;Computational Microelectronics;2004

4. Energy levels of vacancies and interstitial atoms in the band gap of silicon;Semiconductors;2003-04

5. Contribution of the electron subsystem of crystal into reactions between multicharge centers in semiconductors;Semiconductors;2000-02

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