Electrical properties of S-doped GaxIn1−xP alloys
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Solution growth of homogeneous GaxIn1−xP alloys
2. Effect of Te and S Donor Levels on the Properties ofGaAs1−xPxnear the Direct-Indirect Transition
3. The electrical properties of undoped and oxygendoped GaP grown by the liquid encapsulation technique
4. Spectroscopic Study of Tellurium Donors in GaP
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Some Low Field Transport Properties of LPE grown GaAs and AlAs Mixed Alloys and Saxena's Deep Donor;Defence Science Journal;1994-01-01
2. Electrical Transport Properties of GaAs and Alas Mixed Crystals for Semiconductor Devices;IETE Journal of Research;1983-03
3. Photoconductivity storage in Ga1−xAlxAs alloys at low temperatures;Solid-State Electronics;1982-02
4. LPE and VPE In<inf>1-x</inf>Ga<inf>x</inf>As<inf>y</inf>P<inf>1-y</inf>/InP: Transport properties, defects, and device considerations;IEEE Journal of Quantum Electronics;1981-02
5. Deep levels in Ga1−xAlxAs under pressure;Applied Physics Letters;1980-01
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