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Defects in silicon crystals after the high temperature treatment

  • Published:1982-04-16 Issue:2 Volume:70 Page:763-768
  • ISSN:0031-8965
  • Container-title:physica status solidi (a)
  • language:de
  • Short-container-title:phys. stat. sol. (a)

Author:

Groza A. A.,Nikolaeva L. G.,Starchik M. I.,Shmatko G. G.,Zaslavskii Yu. I.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation of Oxygen-Containing Centers in Irradiated Silicon Crystals during Annealing in the Temperature Range of 450–700°С;Inorganic Materials: Applied Research;2020-09

2. Peculiarities of the Initial Stage of Oxygen Precipitation in Irradiated Silicon;Solid State Phenomena;2005-12

3. Precipitation of oxygen in single-crystal silicon implanted with high doses of oxygen;Thin Solid Films;1985-06

4. Defect Aggregates In Silicon;MRS Proceedings;1985

5. Synthesis of silicon dioxide by ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1984-02
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