The interaction between point defects introduced by implantation and dislocations in silicon-Reference-Cited by-同舟云学术

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The interaction between point defects introduced by implantation and dislocations in silicon

Published:1983-03-16 Issue:1 Volume:76 Page:65-70
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Kalinin V. V.,Gerasimenko N. N.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Dislocatsii, Izd. Mir, Moskva 1967.

2. and , Svoistva legirovannikh poluprovodnikov, Ed. Izd. Nauka, Moskva 1977 (p. 151).

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Extended Defects from Ion Implantation and Annealing;Rapid Thermal Processing;1993

2. A systematic analysis of defects in ion-implanted silicon;Applied Physics A Solids and Surfaces;1988-01

3. Correlation between microhardness, dislocation mobility and the isothermal stability of coloration in microcrystalline powders of KCl;Journal of Physics C: Solid State Physics;1986-12-10

4. On the effect of doping impurities on the formation of rod-like defects in silicon;Physica Status Solidi (a);1984-11-16

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