Zum Nachweis von Rekombinationszentren in den Basiszonen von Si-Gleichrichtern
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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1. Die rekombination in thyristoren und gleichrichtern aus silizium: Ihr einfluss auf die durchlasskennlinie und das freiwerdezeitverhalten
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1. How Much Physics is in a Current–Voltage Curve? Inferring Defect Properties From Photovoltaic Device Measurements;IEEE Journal of Photovoltaics;2020-11
2. Iron and its complexes in silicon;Applied Physics A: Materials Science & Processing;1999-07-01
3. On RTA-Indueed Deep Levels in Silicon P+N-Diodes;Physica Status Solidi (a);1991-11-16
4. On the origin of rapid thermal process induced recombination centers in silicon;Journal of Applied Physics;1989-10-15
5. Über die chemische Natur von Rekombinationszentren in Si-Leistungsbauelementen;Physica Status Solidi (a);1983-04-16
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