Carrier lifetime in n-Hg0.8Cd0.2Te at 77 K-Reference-Cited by-同舟云学术

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Carrier lifetime in n-Hg0.8Cd0.2Te at 77 K

Published:1974-04-16 Issue:2 Volume:22 Page:K215-K217
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Nimtz G.,Müller K.-H.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Proc. Internat. Conf. Phys. Semiconductors and Semimetals, Nice 1973, in the press.

2. , , and , to be published.

3. Semiconductor Statistics, Pergamon, New York 1962.

4. Auger Recombination in Hg1−xCdxTe

5. Recombination mechanisms in 8–14‐μ HgCdTe

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1. The electron mobility in Hg1-xCdxTe (x = 0.22 and 0.3): A comparison between experimental and theoretical results;Materials Research Bulletin;2021-08

2. Intrinsic infrared detectors;Progress in Quantum Electronics;1988-01

3. On the Auger Recombination Process in P-Type Lpe HgCdTe;MRS Proceedings;1986

4. The properties and applications of the Hg1−xCdxTe alloy system;Springer Tracts in Modern Physics;1983

5. Recombination effects in narrow-gap semiconductors p-Hg1−xCdxTe;Physica Status Solidi (a);1981-10-16

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