Apparent Band-Gap Narrowing and Its Data Derived from the Measurements of Minority-Carrier Current Density in Heavily Doped Emitters of Silicon Devices-Reference-Cited by-同舟云学术

Apparent Band-Gap Narrowing and Its Data Derived from the Measurements of Minority-Carrier Current Density in Heavily Doped Emitters of Silicon Devices

Published:1996-06-16 Issue:2 Volume:155 Page:547-553
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Van Cong H.,Debiais G.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. A simple accurate solution to minority electron injection in the p-type heavily doped emitter region of silicon devices

2. and , Device Research Conf. 1982, unpublished.

3. Measuring and modeling minority carrier transport in heavily doped silicon

4. Effect of emitter contact on current gain of silicon bipolar devices

5. Influence of the dopant density profile on minority-carrier current in shallow, heavily doped emitters of silicon bipolar devices

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 34.375 % (33.72 %) -Maximal Efficiencies investigated in New n+(p+)-p(n) CdSe1-xSx, CdSe1-xTex - Crystalline Alloy Junction Solar Cells at 300 K, According to Highest Hot Reservoir Temperatures;European Journal of Applied Science, Engineering and Technology;2024-03-01

2. 34.151 % (33.93 %) - Maximal Efficiencies investigated in New n+(p+) - p(n) CdTe1-xSx, CdTe1-xSex - Crystalline Alloy Junction Solar Cells at 300 K, According to Highest Hot Reservoir Temperatures;European Journal of Applied Science, Engineering and Technology;2024-03-01

3. Maximal Efficiencies in New Single GaAs(1−x) P(x) - Alloy Junction Solar Cells at 300 K;European Journal of Theoretical and Applied Sciences;2024-01-01

4. (26.55 %, or 23.69 %)-Limiting Highest Efficiencies, obtained respectively in;European Journal of Theoretical and Applied Sciences;2023-11-01

5. (43.82 %, or 44.05 %)-Limiting Highest Efficiencies, Obtained Respectively in;European Journal of Theoretical and Applied Sciences;2023-11-01