Formation of AuGe contacts to n-GaAs
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. A review of the theory and technology for ohmic contacts to group III–V compound semiconductors
2. Metallurgical and electrical properties of alloyed Ni/AuGe films on n-type GaAs
3. New method for producing ideal metal-semiconductor ohmic contacts
4. Very low resistance NiAuGeNi contacts to n-GaAs
5. Mechanism of formation of Ohmic contacts to ZnSe, ZnS, and mixed crystals ZnSXSe1−X
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Response to “Comment on ‘Physiochemical Effects of Heating Gold Thin Films on Gallium Arsenide’” [J. Electrochem. Soc., 130, 462];Journal of The Electrochemical Society;1985-05-01
2. Fast alloying technique for improved ohmic contacts to n-GaAs;Solid-State Electronics;1984-10
3. In situ investigations of the metal-compound semiconductor interaction by mass spectrometry and electrical resistance measurements;International Journal of Mass Spectrometry and Ion Physics;1983-08
4. Volatile component loss and contact resistance of metals on GaAs and GaP during annealing;Solid-State Electronics;1982-06
5. Mass spectrometric study of semiconductor layer structures;Acta Physica Academiae Scientiarum Hungaricae;1980-08
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