Investigation of amorphous W60Zr40 film as a diffusion barrier in metallization schemes-Reference-Cited by-同舟云学术

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Investigation of amorphous W60Zr40 film as a diffusion barrier in metallization schemes

Published:1984-12-16 Issue:2 Volume:86 Page:471-476
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Zhu M. F.,So F. C. T.,Pan E. T-S.,Nicolet M-A.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Electrical characteristics of Al contact to NiSi using thin W layer as a barrier

2. Corrosion Resistance of Several Integrated-Circuit Metallization Systems

3. TiN and TaN as diffusion barriers in metallizations to silicon semiconductor devices

4. Studies of the Ti-W/Au metallization on aluminum

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. ZrAl3Intermetallic Compound Thin Film as a Diffusion Barrier between Al and Au Layers;Japanese Journal of Applied Physics;1994-06-15

2. Interactions between binary metallic alloys and Si, GeSi and GaAs;Materials Science Reports;1992-01

3. Stability of IrTa diffusion barriers;Materials Science and Engineering: B;1990-09

4. The crystallization temperature of amorphous transition-metal alloys;Materials Letters;1990-08

5. Sputtered W–N diffusion barriers;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1985-11

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