Switching processes and dielectric breakdown in NiO and NiO(Li) thin films-Reference-Cited by-同舟云学术

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Switching processes and dielectric breakdown in NiO and NiO(Li) thin films

Published:1974-05-16 Issue:1 Volume:23 Page:61-67
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Lalevic B.,Fuschillo N.,Leung B.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. and , Proc. IV. Internat. Conf. Amorphous and Liquid Semiconductors, Ed. and , North-Holland Publ. Co., Amsterdam 1972 (p. 449).

2. Switching properties of thin Nio films

3. Initiation of switching in VO2coplanar devices

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved Resistance Switching Characteristics in Ti-Doped $\hbox{Yb}_{2}\hbox{O}_{3}$ for Resistive Nonvolatile Memory Devices;IEEE Electron Device Letters;2012-07

2. Influence of oxygen content on electrical properties of NiO films grown by rf reactive sputtering for resistive random-access memory applications;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006

3. Conductivity switching characteristics and reset currents in NiO films;Applied Physics Letters;2005-02-28

4. Schottky barrier effects on the electrical properties of the BiNbO2Bi system;Physica Status Solidi (a);1979-11-16

5. 2.12 Dielectric dispersion and polarization effects in thin transition metal oxide films;Vacuum;1977-06

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