Ohmic contacts on indium phosphide-Reference-Cited by-同舟云学术

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Ohmic contacts on indium phosphide

Published:1978-12-16 Issue:2 Volume:50 Page:K219-K223
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Weimann G.,Schlapp W.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference3 articles.

1. Ideal ohmic contacts to InP

2. and , Techn. Rep. 65 TBr 15 (1978), Research Institute of the German Federal Post Office.

3. Aufbau und Eigenschaften „ohmscher” Kontakte an GaSb

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis;Semiconductor physics, quantum electronics and optoelectronics;2005-12-15

2. Schottky Diodes and Ohmic Contacts for the III-V Semiconductors;Physics and Chemistry of III-V Compound Semiconductor Interfaces;1985

3. Ohmic contacts to III–V compound semiconductors: A review of fabrication techniques;Solid-State Electronics;1983-03

4. Alloyed tin-gold ohmic contacts to n-type indium phosphide;Solid-State Electronics;1981-10

5. Low resistance ohmic contacts to n- and p-InP;Solid-State Electronics;1981-01

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